Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1

RS Stock No.:: 285-047
Mfr. Part No.:: ISC073N12LM6ATMA1
Brand:: Infineon

Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1

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RS Stock No.:: 285-047
Mfr. Part No.:: ISC073N12LM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	120V
	Series	OptiMOS 6 Power Transistor
	Package Type	PG-TDSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 120V
	Series OptiMOS 6 Power Transistor
	Package Type PG-TDSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - ISC073N12LM6ATMA1

The Infineon MOSFET is an Advanced N channel power transistor that excels in high frequency switching applications. Designed with innovative OptiMOS 6 technology, it delivers exceptional efficiency and performance. With a low on resistance and a high avalanche energy rating, this component is optimised for demanding industrial applications and ensures reliable operation even in challenging thermal environments. Its Compact PG TDSON 8 package further enhances its usability, making integration into various designs straightforward. The transistor operates seamlessly across a wide temperature range, facilitating versatility in numerous applications.

N channel design for enhanced performance

Optimised for high frequency switching

Low on resistance boosts energy efficiency

High avalanche rating ensures reliability

Compact package saves design space

RoHS compliant for sustainability

MSL 1 for easy soldering

Internal body diode improves functionality