Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 19.6 A, 60 V, 8-Pin PG-TDSON-8 ISC800P06LMATMA1

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Packaging Options:
RS Stock No.:
285-058
Mfr. Part No.:
ISC800P06LMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

19.6 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TDSON-8

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.

Very low on resistance improves efficiency
100% avalanche tested for reliability
Pb free lead plating for compliance
Halogen free construction supports eco friendliness
Logic level operation for easy interfacing
Suitable for diverse industrial applications
Excellent thermal characteristics ensure reliability
Enhancement mode design for stable performance

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