Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 86 A, 120 V, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
Packaging Options:
RS Stock No.:
285-048
Mfr. Part No.:
ISC073N12LM6ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TDSON-8

Series

OptiMOS 6 Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is an advanced N channel power transistor that excels in high frequency switching applications. Designed with innovative OptiMOS 6 technology, it delivers exceptional efficiency and performance. With a low on resistance and a high avalanche energy rating, this component is optimised for demanding industrial applications and ensures reliable operation even in challenging thermal environments. Its compact PG TDSON 8 package further enhances its usability, making integration into various designs straightforward. The transistor operates seamlessly across a wide temperature range, facilitating versatility in numerous applications.

N channel design for enhanced performance
Optimised for high frequency switching
Low on resistance boosts energy efficiency
High avalanche rating ensures reliability
Compact package saves design space
RoHS compliant for sustainability
MSL 1 for easy soldering
Internal body diode improves functionality

Related links