Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- RS Stock No.:
- 285-045
- Mfr. Part No.:
- ISC037N12NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 285-045
- Mfr. Part No.:
- ISC037N12NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon MOSFET features is a high performing N channel Power Transistor that delivers exceptional efficiency and reliability for a wide array of applications. Featuring innovative thermal characteristics, this component excels in demanding environments with temperatures reaching up to 175°C. Built using cutting edge OptiMOS technology, it ensures minimal energy losses and enhanced switching capabilities, making it Ideal for high frequency applications. Whether deployed in industrial settings or used in synchronous rectification, this device conforms to stringent RoHS compliance, ensuring it meets modern environmental standards.
Optimised for high frequency switching
Pb free lead plating for compliance
MSL 1 classified for reliability
Low reverse recovery charge improves efficiency
High avalanche energy rating for protection
Excellent gate charge reduces drive losses
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