Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 163 A, 120 V, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1

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Packaging Options:
RS Stock No.:
285-045
Mfr. Part No.:
ISC037N12NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

163 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TDSON-8 FL

Series

OptiMOS 6 Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features is a high performing N channel Power Transistor that delivers exceptional efficiency and reliability for a wide array of applications. Featuring innovative thermal characteristics, this component excels in demanding environments with temperatures reaching up to 175°C. Built using cutting edge OptiMOS technology, it ensures minimal energy losses and enhanced switching capabilities, making it ideal for high frequency applications. Whether deployed in industrial settings or used in synchronous rectification, this device conforms to stringent RoHS compliance, ensuring it meets modern environmental standards.

Optimised for high frequency switching
Pb free lead plating for compliance
MSL 1 classified for reliability
Low reverse recovery charge improves efficiency
High avalanche energy rating for protection
Excellent gate charge reduces drive losses

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