Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 194 A, 120 V, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- RS Stock No.:
- 284-782
- Mfr. Part No.:
- ISC030N12NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 284-782
- Mfr. Part No.:
- ISC030N12NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 194 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | PG-TSON-8 | |
| Series | OptiMOS 6 Power Transistor | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 194 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type PG-TSON-8 | ||
Series OptiMOS 6 Power Transistor | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET is a state of the art Power Transistor designed for high frequency switching applications, boasting exceptional performance and efficiency. This N channel MOSFET is optimised for use in various industrial applications, ensuring peak reliability even under demanding conditions. With its low on resistance and remarkable gate charge characteristics, it enhances performance in synchronous rectification and power conversion systems. The device operates efficiently at high temperatures, making it suitable for a range of applications across sectors. Its compact PG TSON 8 3 package further enables space saving designs while ensuring superior thermal performance, making it a preferred choice for engineers seeking high quality power management solutions.
Very low on resistance minimizes power losses
High efficiency with excellent gate charge
Seamless operation in high frequency applications
High avalanche energy rating for durability
Operates effectively up to 175°C
Complies with RoHS standards for safety
MSL 1 classification for flexible handling
Optimised for synchronous rectification performance
High efficiency with excellent gate charge
Seamless operation in high frequency applications
High avalanche energy rating for durability
Operates effectively up to 175°C
Complies with RoHS standards for safety
MSL 1 classification for flexible handling
Optimised for synchronous rectification performance
Related links
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-TSON-8 IQE022N06LM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1