Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 194 A, 120 V, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1

The Infineon MOSFET is a state of the art Power Transistor designed for high frequency switching applications, boasting exceptional performance and efficiency. This N channel MOSFET is optimised for use in various industrial applications, ensuring peak reliability even under demanding conditions. With its low on resistance and remarkable gate charge characteristics, it enhances performance in synchronous rectification and power conversion systems. The device operates efficiently at high temperatures, making it suitable for a range of applications across sectors. Its compact PG TSON 8 3 package further enables space saving designs while ensuring superior thermal performance, making it a preferred choice for engineers seeking high quality power management solutions.

Very low on resistance minimizes power losses
High efficiency with excellent gate charge
Seamless operation in high frequency applications
High avalanche energy rating for durability
Operates effectively up to 175°C
Complies with RoHS standards for safety
MSL 1 classification for flexible handling
Optimised for synchronous rectification performance