Infineon OptiMOS SiC N-Channel MOSFET, 637 A, 40 V, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
285-038
Mfr. Part No.:
IQDH45N04LM6CGATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

637 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.

N channel design for logic level applications
Outstanding thermal resistance for heat dissipation
Engineered for rapid switching efficiency
Avalanche rated for reliability under stress
Pb free and RoHS compliant for eco friendliness
Halogen free construction meets safety standards
JEDEC certified for industrial performance

Related links