Name: Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 10.3 A, 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1
Brand: Infineon
SKU: 284-793
Price: 0.52 GBP
Availability: Discontinued

The Infineon MOSFET is an OptiMOS Power Transistor is engineered for high performance applications requiring robust reliability and efficiency. With its P channel configuration and an impressive breakdown voltage of 100 V, this device promises to operate optimally under a range of conditions. Its unique enhancement mode design ensures minimal on resistance, while the device is fully compliant with RoHS standards and halogen free, making it an environmentally responsible choice. The power transistor offers remarkable thermal performance, inspired by advanced coupling technologies, ensuring high efficiency for industrial applications. It's fully qualified according to JEDEC guidelines, providing confidence in long term operational stability.

Exceptional performance in high speed switching
Logic level gate drive for easy interfacing
Enhanced thermal resistance for reliability
Meets stringent industrial application requirements
Compact size for efficient PCB space use
Fully qualified per industry standards

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	10.3 A
	Maximum Drain Source Voltage	100 V
	Series	OptiMOS Power Transistor
	Package Type	PG-TSDSON-8 FL
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 10.3 A
	Maximum Drain Source Voltage 100 V
	Series OptiMOS Power Transistor
	Package Type PG-TSDSON-8 FL
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 10.3 A, 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1

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