Name: Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Brand: Infineon
SKU: 284-792
Price: 0.47 GBP
Availability: Discontinued

The Infineon MOSFET is a high performance P channel MOSFET designed for demanding applications that require exceptional efficiency and reliability. This power transistor operates with a maximum drain source voltage of 150V, making it an excellent choice for various power switch applications. Built using advanced OptiMOS technology, it features a very low on resistance, ensuring minimal power loss during operation. Additionally, this component is fully compliant with RoHS and halogen free regulations, highlighting its environmentally friendly design. With rigorous avalanche testing and adherence to JEDEC standards for industrial applications, this device stands out as a robust and versatile option for engineers seeking to enhance their circuit designs with dependable technology.

Supports high voltage applications easily
Outstanding thermal performance and efficiency
Logic level threshold for easier driving
Compact package for space sensitive designs
100% avalanche tested for reliability

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	2.7 A
	Maximum Drain Source Voltage	150 V
	Package Type	PG-TSDSON-8 FL
	Series	OptiMOS Power Transistor
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 2.7 A
	Maximum Drain Source Voltage 150 V
	Package Type PG-TSDSON-8 FL
	Series OptiMOS Power Transistor
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

Related links

Be the first to know about our latest products and services