Infineon 600V CoolMOS SiC N-Channel MOSFET, 68 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R035CFD7XTMA1
- RS Stock No.:
- 284-746
- Mfr. Part No.:
- IPDQ60R035CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-746
- Mfr. Part No.:
- IPDQ60R035CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | 600V CoolMOS | |
| Package Type | PG-HDSOP-22 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 600 V | ||
Series 600V CoolMOS | ||
Package Type PG-HDSOP-22 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor redefines high voltage MOSFET performance with its innovative super junction technology, providing unparalleled efficiency for demanding applications. This cutting edge component is designed to excel in soft switching topologies, making it ideal for phase shift full bridge and LLC resonant converters. By blending robust performance with user friendly application, this product empowers engineers to push the boundaries of power density and reliability without compromise. Underpinning its leading edge capabilities, the CoolMOS CFD7 series ensures that engineers achieve maximum efficiency with minimal design effort, allowing for quick time to market for your next project.
Ultra fast body diode boosts efficiency
Low gate charge simplifies drive requirements
Exceptional reverse recovery minimises losses
Maximises reliability in resonant topologies
Optimised thermal management increases power density
Qualified for industrial use per JEDEC
Improves design flexibility with easy implementation
Low gate charge simplifies drive requirements
Exceptional reverse recovery minimises losses
Maximises reliability in resonant topologies
Optimised thermal management increases power density
Qualified for industrial use per JEDEC
Improves design flexibility with easy implementation
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