Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
- RS Stock No.:
- 284-741
- Mfr. Part No.:
- IPDQ60R020CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-741
- Mfr. Part No.:
- IPDQ60R020CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 112 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | 600V CoolMOS | |
| Package Type | PG-HDSOP-22 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 112 A | ||
Maximum Drain Source Voltage 600 V | ||
Series 600V CoolMOS | ||
Package Type PG-HDSOP-22 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features a CoolMOS CFD7 series introduces a ground breaking power transistor specifically engineered for high voltage applications. With a remarkable voltage rating of 600V, it stands out due to its enhanced efficiency and reliability. The advanced super junction technology provides unparalleled performance, particularly in soft switching applications such as phase shift full bridge converters and LLC resonant topologies. The optimisation of gate charge and reverse recovery characteristics significantly reduces losses, thereby boosting the overall performance of power systems. This product is an ideal choice for industries demanding robust electrical performance, such as server ecosystems, telecommunications, and electric vehicle charging.
Optimised for soft switching topologies
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry
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