Infineon 600V CoolMOS SiC N-Channel MOSFET, 90 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R025CFD7XTMA1
- RS Stock No.:
- 284-742
- Mfr. Part No.:
- IPDQ60R025CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-742
- Mfr. Part No.:
- IPDQ60R025CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | 600V CoolMOS | |
| Package Type | PG-HDSOP-22 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 600 V | ||
Series 600V CoolMOS | ||
Package Type PG-HDSOP-22 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features a CoolMOS CFD7 Power Transistor sets a new benchmark in high voltage power management, meticulously engineered for phase shift full bridge and LLC applications. Its innovative super junction technology ensures exceptional efficiency in resonant topologies, perfectly positioning it for soft switching environments. With a robust design that combines ultra fast body diode performance with minimal gate charge, this power transistor significantly enhances system reliability and performance. Ideal for diverse applications including server infrastructure, telecom systems, and electric vehicle charging, it exemplifies the pinnacle of efficiency and ruggedness. The CFD7 series heralds a sophisticated approach to power management, not just meeting but exceeding modern demands for energy efficiency and operational robustness.
Ultra fast body diode optimises switching
Low gate charge ensures high efficiency
Best in class reverse recovery improves performance
Rugged design withstands di/dt stress
Ideal for high power density solutions
Qualified per JEDEC for industrial use
Streamlined implementation simplifies design processes
Low gate charge ensures high efficiency
Best in class reverse recovery improves performance
Rugged design withstands di/dt stress
Ideal for high power density solutions
Qualified per JEDEC for industrial use
Streamlined implementation simplifies design processes
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