Infineon 650V CoolMOS SiC N-Channel MOSFET, 85 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R029CFD7XTMA1
- RS Stock No.:
- 284-870
- Mfr. Part No.:
- IPDQ65R029CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-870
- Mfr. Part No.:
- IPDQ65R029CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HDSOP-22 | |
| Series | 650V CoolMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HDSOP-22 | ||
Series 650V CoolMOS | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET is designed to meet the demanding requirements of high efficiency switching applications. It incorporates cutting edge technology from the coolmos CFD7 series, enabling superior performance in various scenarios, including resonant and phase shift full bridge topologies. With a breakdown voltage rating of 650V, this device optimises efficiency and thermal management, making it suitable for modern power supply systems. Its fast body diode technology delivers robust operation, ensuring that it can handle high transient loads with ease. Whether used in server applications, telecom systems, or renewable energy solutions like EV charging and solar power, this MOSFET is an excellent choice for manufacturers looking to elevate their product offerings.
Ultra fast body diode ensures rapid response
Low thermal resistance optimises heat dissipation
Enhanced ruggedness ensures reliable operation
Improved switching performance boosts efficiency
Tailored for high power density applications
Comprehensive JEDEC qualification ensures quality
Low thermal resistance optimises heat dissipation
Enhanced ruggedness ensures reliable operation
Improved switching performance boosts efficiency
Tailored for high power density applications
Comprehensive JEDEC qualification ensures quality
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