Infineon 650V CoolMOS SiC N-Channel MOSFET, 36 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R080CFD7XTMA1
- RS Stock No.:
- 284-880
- Mfr. Part No.:
- IPDQ65R080CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-880
- Mfr. Part No.:
- IPDQ65R080CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HDSOP-22 | |
| Series | 650V CoolMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HDSOP-22 | ||
Series 650V CoolMOS | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features a latest generation of CoolMOS technology, this product represents a significant advancement in high performance MOSFETs. Built to extend efficiency at 650V, it surpasses its predecessor, CoolMOS CFD2, by showcasing improved thermal behaviour and enhanced switching performance. Its exceptional capabilities allow it to excel in resonant switching topologies, including LLC and phase shift full bridge. Designed with a fast body diode, the device is optimised for applications demanding high power density and reliability. This product is fully qualified according to JEDEC standards, ensuring superior quality for industrial applications. Perfect for tech developers and engineers seeking cutting edge solutions in EV charging, telecom, and server applications, this MOSFET sets a new benchmark for power efficiency.
Ultra fast body diode enhances speed
Reduces switching losses for efficiency
Best in class on state resistance
Ensures ruggedness during commutation
Safety margin for high bus voltage
Supports light load efficiency
Improves full load efficiency
Optimised for phase shift designs
Complies with JEDEC standards
Reduces switching losses for efficiency
Best in class on state resistance
Ensures ruggedness during commutation
Safety margin for high bus voltage
Supports light load efficiency
Improves full load efficiency
Optimised for phase shift designs
Complies with JEDEC standards
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