Infineon OptiMOS SiC N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1

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Packaging Options:
RS Stock No.:
284-689
Mfr. Part No.:
IPT017N12NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

331 A

Maximum Drain Source Voltage

120 V

Package Type

PG-HSOF-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 6 power transistor sets a new benchmark for performance in the semiconductor industry. Engineered for high efficiency and exceptional thermal management, this product excels in demanding applications. With a robust design that supports 120V, it is tailored for high frequency switching, offering reliability and speed without compromising on energy efficiency. The N channel MOSFET integrates very low on resistance and minimal gate charge, making it an ideal solution for power conversion and control in industrial settings. Its advanced engineering ensures compliance with RoHS and other environmental standards, making it both a sustainable and performance driven choice for modern electronics.

Optimised for high frequency performance
Excellent thermal efficiency for reliability
Low on resistance reduces energy losses
Fast gate charge for swift operations
Qualified for industrial performance
Environmentally compliant for sustainability
Handles high avalanche energy safely
Wide operating temperature range

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