Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1

Subtotal (1 reel of 2000 units)*

£2,600.00

(exc. VAT)

£3,120.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£1.30£2,600.00

*price indicative

RS Stock No.:
220-7365
Mfr. Part No.:
IAUT200N08S5N023ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩ by reducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra low Rds(on)
100% Avalanche tested

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