Infineon OptiMOS SiC N-Channel MOSFET, 510 A, 60 V, 8-Pin PG-HSOF-8-1 IAUTN06S5N008ATMA1

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RS Stock No.:
284-698
Mfr. Part No.:
IAUTN06S5N008ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

510 A

Maximum Drain Source Voltage

60 V

Package Type

PG-HSOF-8-1

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon OptiMOS 5 automotive power MOSFET is engineered for high performance applications in the automotive sector, delivering exceptional efficiency and reliability. Designed as a robust N channel enhancement mode device, it guarantees superior functionality with enhanced electrical testing that meets rigorous industry standards. This innovative component reigns supreme in automotive power management, offering a compact design that seamlessly integrates into diverse automotive systems. With a remarkable operating temperature range and compliance with AEC Q101, it ensures consistent performance even under challenging environmental conditions.

Robust design enhances dependability
Exceeds standard industry qualifications
Effective thermal resistance for heat management
100% avalanche testing ensures durability
RoHS compliant for eco friendly use
Handles high continuous drain currents
Advanced gate charge for rapid switching

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