Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 200 A, 80 V Enhancement, 8-Pin PG-HSOF IAUT200N08S5N023ATMA1

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Subtotal (1 pack of 2 units)*

£4.22

(exc. VAT)

£5.06

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18£2.11£4.22
20 - 48£1.77£3.54
50 - 98£1.665£3.33
100 - 198£1.54£3.08
200 +£1.435£2.87

*price indicative

Packaging Options:
RS Stock No.:
220-7366
Mfr. Part No.:
IAUT200N08S5N023ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 5

Package Type

PG-HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩ by reducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low Rds(on)

100% Avalanche tested

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