IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Brand:
- IXYS
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£470.47
(exc. VAT)
£564.56
(inc. VAT)
- RS Stock No.:
- 193-650
- Mfr. Part No.:
- MII200-12A4
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 270 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Series | |
| Package Type | Y3 DCB | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 110 x 62 x 30mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 270 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Series | ||
Package Type Y3 DCB | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 110 x 62 x 30mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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