Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount
- RS Stock No.:
- 747-1099
- Mfr. Part No.:
- 2MBi300VH-120-50
- Brand:
- Fuji
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£113.58
(exc. VAT)
£136.30
(inc. VAT)
- RS Stock No.:
- 747-1099
- Mfr. Part No.:
- 2MBi300VH-120-50
- Brand:
- Fuji
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Fuji | |
Maximum Continuous Collector Current | 360 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 1.6 kW | |
Configuration | Series | |
Package Type | M276 | |
Mounting Type | Screw Mount | |
Channel Type | N | |
Pin Count | 7 | |
Dimensions | 108 x 62 x 30.5mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand Fuji | ||
Maximum Continuous Collector Current 360 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.6 kW | ||
Configuration Series | ||
Package Type M276 | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Dimensions 108 x 62 x 30.5mm | ||
Maximum Operating Temperature +150 °C | ||
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IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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