Fuji 2MBI900VXA-120P-50 Series IGBT Module, 900 A 1200 V, 4-Pin M271, Screw Mount
- RS Stock No.:
- 761-3420
- Mfr. Part No.:
- 2MBI900VXA-120P-50
- Brand:
- Fuji
Image representative of range
Discontinued
- RS Stock No.:
- 761-3420
- Mfr. Part No.:
- 2MBI900VXA-120P-50
- Brand:
- Fuji
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji | |
| Maximum Continuous Collector Current | 900 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 5.1 kW | |
| Package Type | M271 | |
| Configuration | Series | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Dimensions | 172 x 89 x 38mm | |
| Select all | ||
|---|---|---|
Brand Fuji | ||
Maximum Continuous Collector Current 900 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 5.1 kW | ||
Package Type M271 | ||
Configuration Series | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Dimensions 172 x 89 x 38mm | ||
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IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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