Infineon FZ900R12KE4HOSA1 IGBT Module, 900 A 1200 V
- RS Stock No.:
- 244-5886
- Mfr. Part No.:
- FZ900R12KE4HOSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 244-5886
- Mfr. Part No.:
- FZ900R12KE4HOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 900 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 4.3 kW | |
Number of Transistors | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 900 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 4.3 kW | ||
Number of Transistors 1 | ||
The infineon IGBT module is suitable for auxiliary inverters, high power converters, motor drives, traction drives, ups systems, wind turbines etc.
Electrical features
Extended operation temperature Tvj
Low switching losses
Low VCEsat
VCEsat with positive temperature coefficient
Mechanical features
4 kV AC 1min insulation
High power density
Isolated base plate
Standard housing
Extended operation temperature Tvj
Low switching losses
Low VCEsat
VCEsat with positive temperature coefficient
Mechanical features
4 kV AC 1min insulation
High power density
Isolated base plate
Standard housing
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