IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

£106.01

(exc. VAT)

£127.21

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£106.01
5 - 9£103.25
10 - 24£100.59
25 +£98.07

*price indicative

RS Stock No.:
124-0710
Mfr. Part No.:
MIXA225PF1200TSF
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Maximum Continuous Collector Current

360 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

1100 W

Configuration

Dual

Package Type

SimBus F

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

IGBT Modules, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links