Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

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£215.62

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£258.74

(inc. VAT)

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RS Stock No.:
122-0391
Mfr. Part No.:
SEMiX303GB12E4p
Brand:
Semikron Danfoss
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Brand

Semikron Danfoss

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Package Type

SEMiX®3p

Configuration

Series

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

SEMiX® Dual IGBT Modules


Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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