Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Semikron Danfoss
	Maximum Continuous Collector Current Ic	469A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Package Type	SEMiX3p
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	11
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.4V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Series	Trench
	Length	150mm
	Height	17mm
	Width	62.4 mm
	Automotive Standard	No

	Select all
	Brand Semikron Danfoss
	Maximum Continuous Collector Current Ic 469A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Package Type SEMiX3p
	Mount Type Surface
	Channel Type Type N
	Pin Count 11
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.4V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Series Trench
	Length 150mm
	Height 17mm
	Width 62.4 mm
	Automotive Standard No

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.

For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package

• Trenchgate technology IGBTs

• VCE(sat) has positive temperature coefficient

• High short circuit current capability

• Press-fit pins as auxiliary contacts

• UL recognized

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Semikron Danfoss SEMiX303GB12E4p, Type N-Channel IGBT Module, 469 A 1200 V, 11-Pin SEMiX3p, Surface

SEMiX® Dual IGBT Modules

IGBT Modules, Semikron

Related links