IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount
- RS Stock No.:
- 168-4475
- Mfr. Part No.:
- MII75-12A3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 box of 6 units)*
£339.768
(exc. VAT)
£407.724
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
|---|---|---|
| 6 - 24 | £56.628 | £339.77 |
| 30 - 54 | £51.757 | £310.54 |
| 60 + | £50.512 | £303.07 |
*price indicative
- RS Stock No.:
- 168-4475
- Mfr. Part No.:
- MII75-12A3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | Y4 M5 | |
| Configuration | Series | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 94 x 34 x 30mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type Y4 M5 | ||
Configuration Series | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 94 x 34 x 30mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- IXYS MII75-12A3 Series IGBT Module 7-Pin Y4 M5, Panel Mount
- IXYS MII100-12A3 Series IGBT Module 7-Pin Y4 M5, Panel Mount
- IXYS MDI75-12A3 Single IGBT Module 7-Pin Y4 M5, Panel Mount
- IXYS MII200-12A4 Series IGBT Module 7-Pin Y3 DCB, Screw Mount
- Infineon FF300R12KE4HOSA1 Series IGBT Module 7-Pin 62MM Module, Panel Mount
- Infineon FF200R12KE3HOSA1 Series IGBT Module 7-Pin 62MM Module, Panel Mount
- Infineon FF75R12RT4HOSA1 Series IGBT Module 7-Pin 34MM Module, Panel Mount
- Infineon FF150R12KE3GB2HOSA1 Series IGBT Module 7-Pin 62MM Module, Panel Mount
