IXYS, Type N-Channel IGBT, 100 A 1200 V, 3-Pin PLUS247, Through Hole

View all IGBTs

Subtotal (1 tube of 30 units)*

£522.06

(exc. VAT)

£626.46

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +£17.402£522.06

*price indicative

RS Stock No.:
168-4770
Mfr. Part No.:
IXYX100N120B3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

IGBT

Maximum Continuous Collector Current Ic

100A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1150W

Package Type

PLUS247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

30kHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.6V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

GenX3TM

Standards/Approvals

RoHS

Width

16.13 mm

Length

20.32mm

Automotive Standard

No

COO (Country of Origin):
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links