- RS Stock No.:
- 168-4474
- Mfr. Part No.:
- MII100-12A3
- Brand:
- IXYS
Available to back order for despatch 22/10/2024
Added
Price Each (In a Box of 6)
£61.308
(exc. VAT)
£73.57
(inc. VAT)
Units | Per unit | Per Box* |
6 + | £61.308 | £367.848 |
*price indicative |
- RS Stock No.:
- 168-4474
- Mfr. Part No.:
- MII100-12A3
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 135 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | Y4 M5 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 94 x 34 x 30mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |