Vishay TrenchFET® Gen IV N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S SISS50DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£933.00

(exc. VAT)

£1,119.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.311£933.00

*price indicative

RS Stock No.:
200-6846
Mfr. Part No.:
SISS50DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

45 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
100 % Rg and UIS tested

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