Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

View all MOSFETs

Subtotal (1 reel of 2500 units)*

£880.00

(exc. VAT)

£1,055.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +£0.352£880.00

*price indicative

RS Stock No.:
165-6282
Mfr. Part No.:
SI4909DY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Length

5mm

Number of Elements per Chip

2

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

Related links