onsemi 650V 10.1A, SiC Schottky Diode, 3-Pin D2PAK FFSB0865B

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Subtotal (1 pack of 5 units)*

£3.37

(exc. VAT)

£4.045

(inc. VAT)

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5 +£0.674£3.37

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Packaging Options:
RS Stock No.:
194-5745
Mfr. Part No.:
FFSB0865B
Brand:
onsemi
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Brand

onsemi

Mounting Type

Surface Mount

Package Type

D2PAK

Maximum Continuous Forward Current

10.1A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

577A

COO (Country of Origin):
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC

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