onsemi 650V 10.1A, SiC Schottky Diode, 3-Pin D2PAK FFSB0865B
- RS Stock No.:
- 194-5744
- Mfr. Part No.:
- FFSB0865B
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£539.20
(exc. VAT)
£647.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 800 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 + | £0.674 | £539.20 |
*price indicative
- RS Stock No.:
- 194-5744
- Mfr. Part No.:
- FFSB0865B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Mounting Type | Surface Mount | |
Package Type | D2PAK | |
Maximum Continuous Forward Current | 10.1A | |
Peak Reverse Repetitive Voltage | 650V | |
Diode Configuration | Single | |
Rectifier Type | Schottky Diode | |
Diode Type | SiC Schottky | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Peak Non-Repetitive Forward Surge Current | 577A | |
Select all | ||
---|---|---|
Brand onsemi | ||
Mounting Type Surface Mount | ||
Package Type D2PAK | ||
Maximum Continuous Forward Current 10.1A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 577A | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
Related links
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