onsemi 650V 10.1A, SiC Schottky Diode, 2+Tab-Pin D2PAK FFSB0865B-F085

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Subtotal (1 pack of 10 units)*

£19.03

(exc. VAT)

£22.84

(inc. VAT)

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  • 590 unit(s) ready to ship
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Units
Per unit
Per Pack*
10 - 90£1.903£19.03
100 - 240£1.641£16.41
250 +£1.423£14.23

*price indicative

Packaging Options:
RS Stock No.:
195-8856
Mfr. Part No.:
FFSB0865B-F085
Brand:
onsemi
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Brand

onsemi

Mounting Type

Surface Mount

Package Type

D2PAK

Maximum Continuous Forward Current

10.1A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2+Tab

Maximum Forward Voltage Drop

2.4V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Maximum Forward Current

10.1A

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters

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