onsemi 650V 10.1A, SiC Schottky Diode, 2+Tab-Pin D2PAK FFSB0865B-F085
- RS Stock No.:
- 195-8856
- Mfr. Part No.:
- FFSB0865B-F085
- Brand:
- onsemi
Save 25% when you buy 250 units
Subtotal (1 pack of 10 units)*
£19.03
(exc. VAT)
£22.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 590 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £1.903 | £19.03 |
100 - 240 | £1.641 | £16.41 |
250 + | £1.423 | £14.23 |
*price indicative
- RS Stock No.:
- 195-8856
- Mfr. Part No.:
- FFSB0865B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Mounting Type | Surface Mount | |
Package Type | D2PAK | |
Maximum Continuous Forward Current | 10.1A | |
Peak Reverse Repetitive Voltage | 650V | |
Diode Configuration | Single | |
Rectifier Type | Schottky Diode | |
Diode Type | SiC Schottky | |
Pin Count | 2+Tab | |
Maximum Forward Voltage Drop | 2.4V | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Maximum Forward Current | 10.1A | |
Select all | ||
---|---|---|
Brand onsemi | ||
Mounting Type Surface Mount | ||
Package Type D2PAK | ||
Maximum Continuous Forward Current 10.1A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2+Tab | ||
Maximum Forward Voltage Drop 2.4V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Maximum Forward Current 10.1A | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
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