onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK FFSB3065B-F085
- RS Stock No.:
- 185-9243
- Mfr. Part No.:
- FFSB3065B-F085
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 185-9243
- Mfr. Part No.:
- FFSB3065B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 73A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | EliteSiC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 120μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 9.65 mm | |
| Height | 4.58mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 73A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series EliteSiC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 120μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 9.65 mm | ||
Height 4.58mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP Capable
Applications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
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