Vishay Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET SI5935CDC-T1-GE3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
919-4325
Mfr. Part No.:
SI5935CDC-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

7 nC @ 5 V

Number of Elements per Chip

2

Height

1.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



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