IXYS HiperFET, X2-Class N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2
- RS Stock No.:
- 917-1429
- Distrelec Article No.:
- 302-53-341
- Mfr. Part No.:
- IXFK100N65X2
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£15.49
(exc. VAT)
£18.59
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 213 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £15.49 |
| 2 - 4 | £14.70 |
| 5 - 9 | £13.94 |
| 10 + | £13.63 |
*price indicative
- RS Stock No.:
- 917-1429
- Distrelec Article No.:
- 302-53-341
- Mfr. Part No.:
- IXFK100N65X2
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-264P | |
| Series | HiperFET, X2-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 1.04 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 20.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 26.3mm | |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 5.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-264P | ||
Series HiperFET, X2-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 1.04 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 20.3mm | ||
Maximum Operating Temperature +150 °C | ||
Width 26.3mm | ||
Typical Gate Charge @ Vgs 183 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 5.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
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