IXYS HiperFET, X2-Class N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2
- RS Stock No.:
- 917-1451
- Mfr. Part No.:
- IXFA22N65X2
- Brand:
- IXYS
Bulk discount available
Subtotal (1 pack of 2 units)*
£8.42
(exc. VAT)
£10.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 250 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.21 | £8.42 |
| 10 - 48 | £4.09 | £8.18 |
| 50 - 98 | £3.985 | £7.97 |
| 100 - 198 | £3.875 | £7.75 |
| 200 + | £3.79 | £7.58 |
*price indicative
- RS Stock No.:
- 917-1451
- Mfr. Part No.:
- IXFA22N65X2
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HiperFET, X2-Class | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 145 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 390 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 11.05mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Length | 10.41mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Series HiperFET, X2-Class | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 145 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 390 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 11.05mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 10.41mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
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