IXYS HiperFET, X2-Class N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

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Subtotal (1 pack of 2 units)*

£13.46

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£16.16

(inc. VAT)

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2 - 8£6.73£13.46
10 - 28£6.055£12.11
30 - 88£5.395£10.79
90 - 178£5.16£10.32
180 +£4.92£9.84

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Packaging Options:
RS Stock No.:
917-1467
Mfr. Part No.:
IXFH34N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

650 V

Series

HiperFET, X2-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

540 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Length

16.24mm

Number of Elements per Chip

1

Width

21.45mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.3mm

Forward Diode Voltage

1.4V

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series


The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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