STMicroelectronics STripFET P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL42P6LLF6
- RS Stock No.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Subtotal (1 pack of 10 units)*
£11.95
(exc. VAT)
£14.34
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 22 January 2026
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.195 | £11.95 |
50 - 90 | £1.135 | £11.35 |
100 - 240 | £1.022 | £10.22 |
250 - 490 | £0.919 | £9.19 |
500 + | £0.873 | £8.73 |
*price indicative
- RS Stock No.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | P | |
Maximum Continuous Drain Current | 42 A | |
Maximum Drain Source Voltage | 60 V | |
Series | STripFET | |
Package Type | PowerFLAT 5 x 6 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 34 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 100 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.35mm | |
Typical Gate Charge @ Vgs | 30 nC @ 4.5 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Width | 5.4mm | |
Transistor Material | Si | |
Height | 0.95mm | |
Forward Diode Voltage | 1.1V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type PowerFLAT 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.35mm | ||
Typical Gate Charge @ Vgs 30 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 5.4mm | ||
Transistor Material Si | ||
Height 0.95mm | ||
Forward Diode Voltage 1.1V | ||
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