P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL42P6LLF6
- RS Stock No.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 10 units)**
£11.00
(exc. VAT)
£13.20
(inc. VAT)
Available to back order for despatch 18/09/2025*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 40 | £1.10 | £11.00 |
| 50 - 90 | £1.045 | £10.45 |
| 100 - 240 | £0.941 | £9.41 |
| 250 - 490 | £0.846 | £8.46 |
| 500 + | £0.804 | £8.04 |
**price indicative
- RS Stock No.:
- 876-5685
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET | |
| Package Type | PowerFLAT 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.35mm | |
| Typical Gate Charge @ Vgs | 30 nC @ 4.5 V | |
| Width | 5.4mm | |
| Forward Diode Voltage | 1.1V | |
| Height | 0.95mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type PowerFLAT 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.35mm | ||
Typical Gate Charge @ Vgs 30 nC @ 4.5 V | ||
Width 5.4mm | ||
Forward Diode Voltage 1.1V | ||
Height 0.95mm | ||
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