STMicroelectronics STripFET P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK STD10P6F6
- RS Stock No.:
- 165-8005
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 2500 units)*
£875.00
(exc. VAT)
£1,050.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 13 February 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.35 | £875.00 |
*price indicative
- RS Stock No.:
- 165-8005
- Mfr. Part No.:
- STD10P6F6
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 7.45mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.6mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.1V | |
| Height | 2.38mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 7.45mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.4 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.6mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.1V | ||
Height 2.38mm | ||
- COO (Country of Origin):
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
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