STMicroelectronics STripFET P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL42P6LLF6
- RS Stock No.:
- 178-7402
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)*
£2,157.00
(exc. VAT)
£2,589.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.719 | £2,157.00 |
*price indicative
- RS Stock No.:
- 178-7402
- Mfr. Part No.:
- STL42P6LLF6
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerFLAT 5 x 6 | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 30 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.35mm | |
| Forward Diode Voltage | 1.1V | |
| Height | 0.95mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerFLAT 5 x 6 | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.4mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 30 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 6.35mm | ||
Forward Diode Voltage 1.1V | ||
Height 0.95mm | ||
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