Infineon HEXFET N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220 IRF1405ZPBF
- RS Stock No.:
- 865-5734
- Distrelec Article No.:
- 304-37-848
- Mfr. Part No.:
- IRF1405ZPBF
- Brand:
- Infineon
Subtotal (1 tube of 5 units)*
£6.94
(exc. VAT)
£8.33
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 1,230 unit(s) shipping from 09 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 5 + | £1.388 | £6.94 |
*price indicative
- RS Stock No.:
- 865-5734
- Distrelec Article No.:
- 304-37-848
- Mfr. Part No.:
- IRF1405ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRF1405ZPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220 IRLB8743PBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220 IRL7833PBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET IRF6620TRPBF
- Vishay SUP60020E N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 SUP60020E-GE3
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220