Infineon HEXFET N-Channel MOSFET, 150 A, 30 V, 3-Pin TO-220AB IRL7833PBF

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Subtotal (1 pack of 2 units)*

£3.38

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£4.06

(inc. VAT)

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  • Final 620 unit(s) shipping from 30 October 2025
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2 - 18£1.69£3.38
20 - 48£1.605£3.21
50 - 98£1.535£3.07
100 - 198£1.44£2.88
200 +£1.355£2.71

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RS Stock No.:
688-7193
Mfr. Part No.:
IRL7833PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

32 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

8.77mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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