Infineon HEXFET N-Channel MOSFET, 150 A, 30 V, 3-Pin TO-220AB IRL7833PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

32 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

8.77mm