onsemi PowerTrench N-Channel MOSFET, 167 A, 150 V, 3-Pin TO-247 FDH055N15A
- RS Stock No.:
- 864-8158
- Mfr. Part No.:
- FDH055N15A
- Brand:
- onsemi
Subtotal (1 unit)*
£5.40
(exc. VAT)
£6.48
(inc. VAT)
FREE delivery for orders over £50.00
- 23 unit(s) ready to ship
- Plus 205 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 - 9 | £5.40 |
10 + | £4.65 |
*price indicative
- RS Stock No.:
- 864-8158
- Mfr. Part No.:
- FDH055N15A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 167 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5.9 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 429 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 15.87mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 92 nC @ 10 V | |
Length | 20.82mm | |
Maximum Operating Temperature | +175 °C | |
Height | 4.82mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 167 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 429 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 15.87mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 92 nC @ 10 V | ||
Length 20.82mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.82mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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