onsemi PowerTrench N-Channel MOSFET, 29 A, 150 V, 3-Pin D2PAK FDB2572
- RS Stock No.:
- 166-2540
- Mfr. Part No.:
- FDB2572
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£656.00
(exc. VAT)
£784.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 February 2026
Units | Per unit | Per Reel* |
---|---|---|
800 + | £0.82 | £656.00 |
*price indicative
- RS Stock No.:
- 166-2540
- Mfr. Part No.:
- FDB2572
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 29 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 146 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 135 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 11.33mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 146 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 135 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 11.33mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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