onsemi PowerTrench N-Channel MOSFET, 92 A, 150 V, 3-Pin D2PAK FDB110N15A
- RS Stock No.:
- 166-3533
- Mfr. Part No.:
- FDB110N15A
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,631.20
(exc. VAT)
£1,957.60
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 03 April 2026
Units | Per unit | Per Reel* |
---|---|---|
800 + | £2.039 | £1,631.20 |
*price indicative
- RS Stock No.:
- 166-3533
- Mfr. Part No.:
- FDB110N15A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 92 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 11 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 234 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 47 nC @ 10 V | |
Width | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 92 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 234 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 47 nC @ 10 V | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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