onsemi PowerTrench N-Channel MOSFET, 79 A, 150 V, 3-Pin D2PAK FDB2532
- RS Stock No.:
- 124-1329
- Mfr. Part No.:
- FDB2532
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,491.20
(exc. VAT)
£1,789.60
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 February 2026
Units | Per unit | Per Reel* |
---|---|---|
800 + | £1.864 | £1,491.20 |
*price indicative
- RS Stock No.:
- 124-1329
- Mfr. Part No.:
- FDB2532
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 79 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 48 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 310 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 11.33mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 79 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 11.33mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2532
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB075N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB110N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2572
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2552
- onsemi PowerTrench N-Channel MOSFET 75 V, 3-Pin D2PAK FDB088N08
- onsemi PowerTrench N-Channel MOSFET 200 V, 3-Pin D2PAK FDB2614
- onsemi PowerTrench N-Channel MOSFET 250 V, 3-Pin D2PAK FDB2710