onsemi PowerTrench N-Channel MOSFET, 8 A, 150 V, 3-Pin DPAK FDD86250
- RS Stock No.:
- 166-1704
- Mfr. Part No.:
- FDD86250
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,882.50
(exc. VAT)
£2,260.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.753 | £1,882.50 |
*price indicative
- RS Stock No.:
- 166-1704
- Mfr. Part No.:
- FDD86250
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 45 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 132 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Width | 6.22mm | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 132 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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