onsemi PowerTrench N-Channel MOSFET, 8 A, 150 V, 3-Pin DPAK FDD86250
- RS Stock No.:
- 759-9484
- Mfr. Part No.:
- FDD86250
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.29
(exc. VAT)
£2.748
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,430 unit(s) ready to ship
- Plus 999,998,568 unit(s) shipping from 19 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £1.145 | £2.29 |
| 10 - 98 | £0.97 | £1.94 |
| 100 - 248 | £0.765 | £1.53 |
| 250 - 498 | £0.73 | £1.46 |
| 500 + | £0.645 | £1.29 |
*price indicative
- RS Stock No.:
- 759-9484
- Mfr. Part No.:
- FDD86250
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 132 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 132 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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