Name: Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK IPB80P03P4L07ATMA1
Brand: Infineon
SKU: 857-4546
Price: 0.82 GBP
Availability: OutOfStock

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	30 V
	Series	OptiMOS P
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	12.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	88 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +5 V
	Transistor Material	Si
	Width	9.25mm
	Maximum Operating Temperature	+175 °C
	Length	10mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 30 V
	Series OptiMOS P
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 12.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 88 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +5 V
	Transistor Material Si
	Width 9.25mm
	Maximum Operating Temperature +175 °C
	Length 10mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Height 4.4mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK IPB80P03P4L07ATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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