P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P4L07ATMA1

RS Stock No.:: 857-4546
Mfr. Part No.:: IPB80P03P4L07ATMA1
Brand:: Infineon

P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P4L07ATMA1

999999999 In stock - FREE next working day delivery available

Price Each (On a Reel of 1000)

£0.682

(exc. VAT)

£0.818

(inc. VAT)

Units	Per unit	Per Reel*
1000 +	£0.682	£682.00

*price indicative

RS Stock No.:: 857-4546
Mfr. Part No.:: IPB80P03P4L07ATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS P
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	12.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	88 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +5 V
Typical Gate Charge @ Vgs	63 nC @ 10 V
Length	10mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.25mm
Number of Elements per Chip	1
Height	4.4mm
Minimum Operating Temperature	-55 °C