Name: Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1
Brand: Infineon
SKU: 857-4552
Price: 0.88 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	10.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	88 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	10mm
	Typical Gate Charge @ Vgs	80 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	9.25mm
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 10.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 88 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 10mm
	Typical Gate Charge @ Vgs 80 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 9.25mm
	Height 4.4mm
	Minimum Operating Temperature -55 °C

RoHS Status: Not Applicable

Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1

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