P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1

RS Stock No.:: 823-5554
Mfr. Part No.:: IPP80P03P4L04AKSA1
Brand:: Infineon

P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1

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Subtotal (1 pack of 5 units)**

£11.02

(exc. VAT)

£13.23

(inc. VAT)

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Units	Per unit	Per Pack**
5 - 20	£2.204	£11.02
25 - 45	£1.808	£9.04
50 - 120	£1.696	£8.48
125 - 245	£1.588	£7.94
250 +	£1.476	£7.38

**price indicative

RS Stock No.:: 823-5554
Mfr. Part No.:: IPP80P03P4L04AKSA1
Brand:: Infineon

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

Infineon OptiMOS P Series MOSFET, 80A Maximum Continuous Drain Current, 137W Maximum Power Dissipation - IPP80P03P4L04AKSA1

This P-channel MOSFET is designed for high-performance applications in electronic circuits and plays a crucial role in power management and control, especially within the automotive sector. Built to withstand challenging environments, it operates efficiently across a wide temperature range and meets AEC qualification standards, making it appropriate for automotive use.

Features & Benefits

• P-channel configuration enhances design flexibility
• Continuous drain current capability of up to 80A
• Robust thermal performance with a maximum operating temperature of +175°C
• Low RDS(on) of 7mΩ enhances energy efficiency
• High power dissipation capacity of 137W enables effective thermal management
• Avalanche-tested for reliability under dynamic conditions

Applications

• Reverse battery protection in automotive systems
• High power driver circuits
• Automated control systems requiring dependable performance
• Power management solutions in electronic devices

What is the maximum operating temperature for this device?

The device can function at temperatures up to +175°C, making it suitable for arduous applications.

How can it be used in automotive systems?

Its automotive qualification ensures durability under harsh conditions, making it ideal for applications like reverse battery protection and power management.

What are the gate-source voltage limits?

The acceptable gate-source voltage ranges from -16V to +5V, providing flexibility in circuit designs.

What measures are in place for thermal management?

With a maximum power dissipation of 137W and strong thermal characteristics, it effectively manages heat in demanding applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	30 V
Package Type	TO-220
Series	OptiMOS P
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	137 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +5 V
Typical Gate Charge @ Vgs	125 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	10mm
Transistor Material	Si
Number of Elements per Chip	1
Width	4.4mm
Minimum Operating Temperature	-55 °C
Height	15.65mm
Forward Diode Voltage	1.3V
Automotive Standard	AEC