Name: Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1
Brand: Infineon
SKU: 823-5554
Price: 2.65 GBP
Availability: Discontinued

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

Infineon OptiMOS P Series MOSFET, 80A Maximum Continuous Drain Current, 137W Maximum Power Dissipation - IPP80P03P4L04AKSA1

This P-channel MOSFET is designed for high-performance applications in electronic circuits and plays a crucial role in power management and control, especially within the automotive sector. Built to withstand challenging environments, it operates efficiently across a wide temperature range and meets AEC qualification standards, making it appropriate for automotive use.

Features & Benefits

• P-channel configuration enhances design flexibility
• Continuous drain current capability of up to 80A
• Robust thermal performance with a maximum operating temperature of +175°C
• Low RDS(on) of 7mΩ enhances energy efficiency
• High power dissipation capacity of 137W enables effective thermal management
• Avalanche-tested for reliability under dynamic conditions

Applications

• Reverse battery protection in automotive systems
• High power driver circuits
• Automated control systems requiring dependable performance
• Power management solutions in electronic devices

What is the maximum operating temperature for this device?

The device can function at temperatures up to +175°C, making it suitable for arduous applications.

How can it be used in automotive systems?

Its automotive qualification ensures durability under harsh conditions, making it ideal for applications like reverse battery protection and power management.

What are the gate-source voltage limits?

The acceptable gate-source voltage ranges from -16V to +5V, providing flexibility in circuit designs.

What measures are in place for thermal management?

With a maximum power dissipation of 137W and strong thermal characteristics, it effectively manages heat in demanding applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	30 V
	Series	OptiMOS P
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	137 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +5 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	125 nC @ 10 V
	Number of Elements per Chip	1
	Length	10mm
	Width	4.4mm
	Transistor Material	Si
	Height	15.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Automotive Standard	AEC

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 30 V
	Series OptiMOS P
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 137 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +5 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 125 nC @ 10 V
	Number of Elements per Chip 1
	Length 10mm
	Width 4.4mm
	Transistor Material Si
	Height 15.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Automotive Standard AEC

Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1